FF8MR12W2M1B11BOMA1 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

FF8MR12W2M1B11BOMA1

Description:

MOSFET 2N-CH 1200V AG-EASY2BM-2

Stock:

6718

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$51.94

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Parameters

Current at 25 ° C - continuous drain (Id)

150A(Tj)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

2 N-channels(two)

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

372nC @ 15V

Input capacitance at different Vds (Ciss) (maximum)

11000pF @ 800V

On resistance (maximum) for different Ids and Vgs

7.5 mΩ @ 150A,15V(standard)

Power - maximum

20mW(Tc)

Vgs (th) (maximum) for different Ids

5.55V @ 60mA

packing

bulk,pallet

series

CoolSiC™+

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

module

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

下载FF8MR12W2M1B11BOMA1.pdf

FF8MR12W2M1B11BOMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6718,Price reference "real-time change" China/Hongkong。 FF8MR12W2M1B11BOMA1 package/specs, Download FF8MR12W2M1B11BOMA1、Datasheet。